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Freescale Semiconductor Technical Data
Document Number: MRFG35005AN Rev. 2, 6/2009
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. * Typical Single - Carrier W - CDMA Performance: VDD = 12 Volts, IDQ = 80 mA, Pout = 450 mWatts Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 11 dB Drain Efficiency -- 26% ACPR @ 5 MHz Offset -- - 44 dBc in 3.84 MHz Channel Bandwidth * 4.5 Watts P1dB @ 3550 MHz, CW Features * Excellent Phase Linearity and Group Delay Characteristics * High Gain, High Efficiency and High Linearity * RoHS Compliant * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MRFG35005ANT1
3.5 GHz, 4.5 W, 12 V POWER FET GaAs PHEMT
CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Symbol VDSS VGS Pin Tstg Tch Value 15 -5 30 - 65 to +150 175 Unit Vdc Vdc dBm C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (2) 13.7 Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
1. For reliable operation, the operating channel temperature should not exceed 150C. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2007 - 2009. All rights reserved.
MRFG35005ANT1 1
RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) Off State Leakage Current (VGS = - 0.4 Vdc, VDS = 0 Vdc) Off State Drain Current (VDS = 12 Vdc, VGS = - 2.5 Vdc) Off State Current (VDS = 28.5 Vdc, VGS = - 2.5 Vdc) Gate- Source Cut - off Voltage (VDS = 3.5 Vdc, IDS = 8.7 mA) Quiescent Gate Voltage (VDS = 12 Vdc, ID = 105 mA) Symbol IDSS IGSS IDSO IDSX VGS(th) VGS(Q) Min -- -- -- -- - 1.2 - 1.1 Typ 1.7 <1 1 <1 - 0.95 - 0.85 Max -- 100 600 9 - 0.7 - 0.6 Unit Adc Adc Adc mAdc Vdc Vdc
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 12 Vdc, IDQ = 80 mA, Pout = 450 mWatts Avg., f = 3550 MHz, Single- Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Gps hD ACPR 10 22 -- 11 26 - 44 -- -- - 39 dB % dBc
Typical RF Performance (In Freescale Test Fixture, 50 hm system) VDD = 12 Vdc, IDQ = 80 mA, f = 3550 MHz Output Power, 1 db Compression Point, CW P1dB -- 4.5 -- W
MRFG35005ANT1 2 RF Device Data Freescale Semiconductor
C8 VBIAS C11 C10 C9 C7
C18 VSUPPLY C17 C19 C20 C21 C22
C6
C16
C5
R1 C3 C4 C14 C15
Z5 RF INPUT Z1 C1 C29 C28 C27 C26 Z2 C2 Z3 Z4 Z6 Z7 Z8 Z9 Z10 C12 Z11 C13 Z12 Z13
Z15 C23 Z14 Z16 Z17 Z18 C24 C25 Z19 RF OUTPUT
Z1, Z19 Z2 Z3 Z4 Z5, Z15 Z6, Z8, Z10 Z7, Z9 Z11
0.044 x 0.125 Microstrip 0.044 x 0.435 Microstrip 0.254 x 0.298 Microstrip 0.590 x 0.336 Microstrip 0.015 x 0.527 Microstrip 0.025 x 0.050 Microstrip 0.025 x 0.125 Microstrip 0.081 x 0.400 Microstrip
Z12 Z13 Z14 Z16 Z17 Z18 PCB
0.408 x 0.120 Microstrip 0.174 x 0.259 Microstrip 0.348 x 0.269 Microstrip 0.110 x 0.075 Microstrip 0.110 x 0.240 Microstrip 0.044 x 0.387 Microstrip Rogers 4350, 0.020, r = 3.5
Figure 1. MRFG35005AN Test Circuit Schematic Table 6. MRFG35005AN Test Circuit Component Designations and Values
Part C1, C24 C2 C3, C4, C14, C15 C5, C16 C6, C17 C7, C18 C8, C19 C9, C20 C10, C21 C11, C22 C12, C28 C13, C26 C23 C25 C27 C29 R1 Description 7.5 pF Chip Capacitors 0.4 pF Chip Capacitor 3.9 pF Chip Capacitors 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 39K pF Chip Capacitors 0.01 F Chip Capacitors 10 F Chip Capacitors 0.1 pF Chip Capacitors 0.3 pF Chip Capacitors 1.0 pF Chip Capacitor 1.2 pF Chip Capacitor 0.2 pF Chip Capacitor 0.8 pF Chip Capacitor 100 , 1/4 W Chip Resistor Part Number ATC100A7R5JT150XT 08051J0R4BBS 08051J3R9BBS ATC100A100JT150XT ATC100A101JT150XT ATC100B101JT500XT ATC100B102JT50XT ATC200B393KT50XT ATC200B103KT50XT GRM55DR61H106KA88B 08051J0R1BBS 08051J0R3BBS 08051J1R0BBS 08051J1R2BBS 08051J0R2BBS 08051J0R8BBS CRCW12061000FKTA Manufacturer ATC AVX AVX ATC ATC ATC ATC ATC ATC Murata AVX AVX AVX AVX AVX AVX Vishay
MRFG35005ANT1 RF Device Data Freescale Semiconductor 3
VG-
C10 C9
C11
C8 C7 C6 C5 R1
C19 C20 C21 C18 C17 C16 C14 C15
VD+ C22
C3
C4
C12 C1 C2 C28 C29
C13 C23
C25 C27 C26
C24
MRFG35005AN Rev. 3
Figure 2. MRFG35005AN Test Circuit Component Layout
MRFG35005ANT1 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
14 12 Gps, POWER GAIN (dB) 10 8 6 D 4 2 18 20 22 24 26 28 30 32 Pout, OUTPUT POWER (dBm) 10 0 VDS = 12 Vdc, IDQ = 80 mA, f = 3550 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth S = 0.852e-115.6_, L = 0.737e-146.1_ Gps 60 50 40 30 20 D, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB)
Figure 3. Single - Channel W - CDMA Power Gain and Drain Efficiency versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -10 VDS = 12 Vdc, IDQ = 80 mA, f = 3550 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth S = 0.852e-115.6_, L = 0.737e-146.1_ IRL -5
-20
-10
-30
-15
-40 ACPR
-20
-50
-25
-60 18 20 22 24 26 28 30 32 Pout, OUTPUT POWER (dBm)
-30
Figure 4. Single - Channel W - CDMA Adjacent Channel Power Ratio and IRL versus Output Power
NOTE: All data is referenced to package lead interface. S and L are the impedances presented to the DUT. All data is generated from load pull, not from the test circuit shown.
MRFG35005ANT1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
14 12 Gps, POWER GAIN (dB) 10 8 6 D 4 2 18 20 22 24 26 28 30 32 Pout, OUTPUT POWER (dBm) 10 0 VDD = 12 Vdc, IDQ = 80 mA, f = 3550 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) Gps 60 50 40 30 20 D, DRAIN EFFICIENCY (%) D, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB)
Figure 5. Single - Channel W - CDMA Power Gain and Drain Efficiency versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 0 VDD = 12 Vdc, IDQ = 80 mA, f = 3550 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 0
-10
-10
-20 IRL -30
-20
-30
-40 ACPR -50 18 20 22 24 26 28 30 32 Pout, OUTPUT POWER (dBm)
-40
-50
Figure 6. Single - Channel W - CDMA Adjacent Channel Power Ratio and IRL versus Output Power
14 12 Gps, POWER GAIN (dB) 10 Gps 8 6 D 4 2 3450 24 22 3650 28 26 VDD = 12 Vdc, IDQ = 80 mA, Pout = 450 mW Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 34 32 30
3500
3550 f, FREQUENCY (MHz)
3600
Figure 7. Single - Channel W - CDMA Power Gain and Drain Efficiency versus Frequency NOTE: Data is generated from the test circuit shown. MRFG35005ANT1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 0 VDD = 12 Vdc, IDQ = 80 mA, Pout = 450 mW Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 0 IRL, INPUT RETURN LOSS (dB) D, DRAIN EFFICIENCY (%) -5
-10
-20
-10
-30 IRL -40 ACPR -50 3450 3500 3550 f, FREQUENCY (MHz) 3600
-15
-20
-25 3650
Figure 8. Single - Channel W - CDMA Adjacent Channel Power Ratio and IRL versus Frequency
-5 EVM, ERROR VECTOR MAGNITUDE (dB) -10 -15 -20 -25 D -30 EVM -35 18 20 22 24 26 28 30 32 Pout, OUTPUT POWER (dBm) 0 10 VDD = 12 Vdc, IDQ = 80 mA, f = 3550 MHz Single-Carrier OFDM 802.16d, 64 QAM 3/4 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 60 50 40 30 20
Figure 9. Single - Channel OFDM Error Vector Magnitude and Drain Efficiency versus Output Power
NOTE: Data is generated from the test circuit shown.
MRFG35005ANT1 RF Device Data Freescale Semiconductor 7
Zo = 50 Zload
f = 3550 MHz
Zsource f = 3550 MHz
VDD = 12 Vdc, IDQ = 80 mA, Pout = 450 mW Avg. f MHz 3550 Zsource W 5.6 - j31.2 Zload W 8.3 - j14.8
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 10. Series Equivalent Source and Load Impedance
MRFG35005ANT1 8 RF Device Data Freescale Semiconductor
Table 7. Common Source S - Parameters (VDD = 12 Vdc, IDQ = 80 mA, TA = 25C, 50 Ohm System)
f MHz 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 2400 2450 2500 2550 2600 2650 2700 2750 S11 |S11| 0.916 0.916 0.916 0.916 0.916 0.916 0.916 0.915 0.916 0.916 0.914 0.915 0.915 0.915 0.915 0.914 0.913 0.913 0.913 0.913 0.911 0.910 0.909 0.909 0.909 0.908 0.908 0.907 0.908 0.908 0.907 0.908 0.907 0.912 0.907 0.907 0.906 0.905 0.906 0.904 0.903 0.903 0.900 0.901 0.899 0.898 - 175.6 - 177.4 - 178.9 179.7 178.5 177.4 176.4 175.5 174.7 174.0 173.3 172.6 172.0 171.4 170.8 170.1 169.6 168.9 168.1 167.3 166.4 163.1 162.3 161.5 160.7 159.9 159.1 158.3 157.6 156.8 156.1 155.3 154.5 153.6 153.1 152.2 151.3 150.5 149.6 148.7 147.8 146.8 145.8 144.8 143.8 142.7 |S21| 6.446 5.893 5.422 5.028 4.693 4.405 4.153 3.931 3.729 3.548 3.381 3.236 3.097 2.974 2.861 2.757 2.661 2.572 2.488 2.412 2.341 2.292 2.229 2.170 2.113 2.060 2.009 1.960 1.915 1.871 1.829 1.791 1.754 1.721 1.688 1.657 1.629 1.603 1.579 1.557 1.536 1.518 1.500 1.483 1.469 1.455 S21 82.2 80.3 78.4 76.7 75.0 73.3 71.7 70.1 68.5 67.0 65.4 64.0 62.5 61.1 59.6 58.2 56.7 55.3 53.8 52.4 50.9 49.2 47.8 46.3 44.9 43.4 42.0 40.5 39.1 37.7 36.2 34.8 33.4 31.9 30.5 29.0 27.6 26.1 24.6 23.1 21.6 20.1 18.5 17.0 15.4 13.8 |S12| 0.029 0.029 0.029 0.029 0.029 0.029 0.029 0.029 0.029 0.029 0.030 0.030 0.030 0.030 0.030 0.030 0.030 0.030 0.030 0.030 0.030 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.032 0.032 0.032 0.032 0.032 0.032 0.032 0.033 0.033 0.033 0.033 0.034 S12 0.7 0.1 - 1.2 - 2.2 - 3.0 - 4.0 - 4.7 - 5.4 - 6.1 - 6.8 - 7.3 - 8.0 - 8.7 - 9.3 - 9.9 - 10.7 - 11.2 - 11.8 - 12.4 - 13.1 - 13.8 - 14.7 - 15.3 - 16.1 - 16.5 - 17.2 - 17.7 - 18.3 - 19.0 - 19.8 - 20.3 - 21.1 - 21.7 - 22.3 - 22.8 - 23.6 - 24.2 - 24.8 - 25.7 - 26.6 - 27.4 - 27.9 - 28.5 - 29.3 - 30.1 - 31.0 |S22| 0.653 0.652 0.651 0.649 0.648 0.646 0.645 0.644 0.643 0.642 0.640 0.640 0.640 0.639 0.639 0.639 0.638 0.638 0.639 0.639 0.639 0.636 0.635 0.635 0.636 0.636 0.636 0.636 0.637 0.638 0.638 0.638 0.638 0.642 0.639 0.638 0.638 0.637 0.637 0.635 0.634 0.633 0.630 0.629 0.627 0.625 S22 - 175.5 - 176.7 - 177.9 - 179.1 179.7 178.6 177.5 176.4 175.3 174.2 173.1 171.9 170.8 169.8 168.8 167.7 166.8 166.0 165.1 164.2 163.5 164.9 164.2 163.4 162.6 161.8 161.0 160.2 159.4 158.6 157.8 157.0 156.2 155.3 154.8 154.0 153.1 152.3 151.6 150.7 149.9 149.2 148.3 147.5 146.6 145.8 (continued)
MRFG35005ANT1 RF Device Data Freescale Semiconductor 9
Table 7. Common Source S - Parameters (VDD = 12 Vdc, IDQ = 80 mA, TA = 25C, 50 Ohm System) (continued)
f MHz 2800 2850 2900 2950 3000 3050 3100 3150 3200 3250 3300 3350 3400 3450 3500 3550 3600 3650 3700 3750 3800 3850 3900 3950 4000 4050 4100 4150 4200 4250 4300 4350 4400 4450 4500 4550 4600 4650 4700 4750 4800 4850 4900 4950 5000 S11 |S11| 0.897 0.895 0.895 0.893 0.894 0.892 0.890 0.889 0.887 0.885 0.884 0.883 0.882 0.881 0.878 0.877 0.876 0.875 0.873 0.871 0.870 0.868 0.867 0.865 0.863 0.862 0.860 0.858 0.856 0.854 0.852 0.850 0.847 0.845 0.845 0.842 0.838 0.840 0.836 0.840 0.837 0.837 0.838 0.834 0.834 141.6 140.5 139.3 138.0 136.8 135.5 134.3 133.0 131.6 130.3 128.9 127.5 126.1 124.6 123.1 121.7 120.2 118.6 117.2 115.6 114.1 112.5 110.9 109.3 107.7 106.0 104.2 102.4 100.6 98.7 96.8 94.9 92.8 90.7 88.5 86.1 84.2 81.6 79.3 76.9 73.9 71.4 68.5 65.9 62.9 |S21| 1.444 1.433 1.424 1.415 1.407 1.398 1.393 1.386 1.381 1.376 1.372 1.368 1.365 1.361 1.358 1.354 1.351 1.349 1.346 1.343 1.341 1.339 1.337 1.335 1.332 1.331 1.331 1.329 1.327 1.326 1.325 1.324 1.323 1.323 1.322 1.320 1.317 1.317 1.316 1.313 1.311 1.309 1.305 1.300 1.295 S21 12.3 10.6 9.0 7.4 5.7 4.1 2.4 0.7 - 1.0 - 2.7 - 4.5 - 6.2 - 7.9 - 9.7 - 11.5 - 13.2 - 15.0 - 16.8 - 18.6 - 20.4 - 22.3 - 24.1 - 26.0 - 27.9 - 29.8 - 31.7 - 33.6 - 35.7 - 37.7 - 39.8 - 41.9 - 44.0 - 46.1 - 48.4 - 50.6 - 53.0 - 55.3 - 57.7 - 60.0 - 62.6 - 65.1 - 67.7 - 70.3 - 73.0 - 75.7 |S12| 0.034 0.034 0.034 0.035 0.035 0.036 0.036 0.036 0.037 0.037 0.038 0.038 0.039 0.039 0.040 0.040 0.040 0.041 0.041 0.042 0.042 0.042 0.043 0.043 0.044 0.044 0.045 0.045 0.046 0.046 0.047 0.047 0.048 0.048 0.049 0.049 0.050 0.050 0.051 0.052 0.052 0.053 0.053 0.054 0.054 S12 - 31.8 - 32.6 - 33.4 - 34.3 - 35.1 - 36.1 - 36.8 - 37.8 - 38.6 - 39.7 - 40.7 - 41.7 - 42.8 - 43.8 - 45.0 - 46.0 - 47.2 - 48.1 - 48.9 - 50.0 - 51.0 - 52.2 - 53.2 - 54.3 - 55.4 - 56.5 - 57.6 - 58.7 - 60.0 - 61.3 - 62.5 - 63.7 - 65.0 - 66.5 - 67.9 - 69.4 - 70.9 - 72.6 - 73.9 - 75.8 - 77.6 - 79.5 - 81.2 - 83.0 - 85.0 |S22| 0.623 0.619 0.617 0.614 0.612 0.608 0.604 0.601 0.598 0.594 0.590 0.586 0.583 0.580 0.576 0.572 0.568 0.565 0.561 0.558 0.555 0.551 0.548 0.545 0.541 0.538 0.535 0.532 0.528 0.526 0.523 0.519 0.516 0.513 0.509 0.506 0.502 0.498 0.494 0.490 0.486 0.482 0.478 0.474 0.470 S22 145.0 144.2 143.3 142.4 141.5 140.7 139.7 138.9 137.9 136.9 135.9 134.9 133.9 132.9 131.9 130.9 129.8 128.7 127.6 126.4 125.3 124.1 122.9 121.6 120.3 119.0 117.7 116.3 114.9 113.5 112.0 110.4 108.8 107.0 105.2 103.4 101.4 99.4 97.4 95.1 92.9 90.5 88.1 85.7 82.9
MRFG35005ANT1 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
A F
3
0.146 3.71
0.095 2.41
0.115 2.92
B
D
1
2
R
L
0.115 2.92 0.020 0.51
4
N K Q
ZONE V
0.35 (0.89) X 45_" 5 _ 10_DRAFT
inches mm
SOLDER FOOTPRINT
INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25
U H
4
P C
Y
Y
E
ZONE W
1
2
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE
3
G
S
ZONE X
VIEW Y - Y
CASE 466 - 03 ISSUE D PLD - 1.5 PLASTIC
DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X
RF Device Data Freescale Semiconductor
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MRFG35005ANT1 11
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 2 Date July 2007 Dec. 2008 June 2009 * Initial Release of Data Sheet * Removed "Operating Case Temperature Range" from Maximum Ratings table so that the maximum channel temperature rating is the limiting thermal design criteria and not the case temperature range, p. 1 * Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing process as described in Product and Process Change Notification number, PCN13516, p. 1 Description
MRFG35005ANT1 12 RF Device Data Freescale Semiconductor
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MRFG35005ANT1
Document Number: RF Device Data MRFG35005AN Rev. 2, 6/2009 Freescale Semiconductor
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